Yifei Duan

Taming the boundary effect: Femtosecond laser slicing of 4H-SiC enabled by side scribing for improved processability

The 4H polytype of silicon carbide (4H-SiC) has excellent properties such as high electron mobility and high saturation electron velocity; it has therefore become an important material for high-power and high-frequency devices. In the slicing step of wafer fabrication, however, c...

Enhancement of the optical and spin properties of silicon vacancies in proton-implanted 4H-SiC via femtosecond laser annealing

The silicon vacancy (VSi) in 4H-SiC represents a promising candidate for solid-state qubits. However, conventional high-temperature annealing typically suffers from undesired impurity diffusion and limited spatial localization during fabrication. Here, we present a femtosecond la...