Xuguang Cao

Microscopic Understanding of V-Shaped Pits Induced Quantum Barriers and Localized-State Luminescence in High-Indium-Content InGaN/GaN Multiple-Quantum-Well LEDs

Abstract In this study, microstructural characterization with high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), variable-temperature steady-state and time-resolved photoluminescence (PL), PL-excitation spectral measurements, and calculations ba...