Xinyu Liu

Composite Crystalline Aluminum Nitride Passivation for Near-Junction Thermal Management in Gallium Nitride High-Electron-Mobility Transistors

In this work, we demonstrate a composite crystalline aluminum nitride (AlN) passivation layer for near-junction thermal management in aluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs). The 120-nm-thick AlN film consists of an ordered...

Tuning Upconversion through Ho3+/Nd3+ Co-sensitized Cascade Energy Transfer

Abstract Lanthanide-doped upconversion nanocrystals (UCNCs) have attracted significant interest, driven by their emerging applications in photonics and anticounterfeiting. However, conventional UCNCs are excited by 808, 980, or 1540 nm, and there remains a gap within the 808–980...