Xinhua Wang

Composite Crystalline Aluminum Nitride Passivation for Near-Junction Thermal Management in Gallium Nitride High-Electron-Mobility Transistors

In this work, we demonstrate a composite crystalline aluminum nitride (AlN) passivation layer for near-junction thermal management in aluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs). The 120-nm-thick AlN film consists of an ordered...

Lamellar high-entropy TiVCrMoC3 MXene enabling excellent hydrogen storage kinetics and cyclic stability of MgH2 via multi-phase interfaces and multiple transition metals effects

MgH2 is a promising hydrogen storage medium, but its industrial use is hindered by high dehydrogenation temperatures and sluggish kinetics. Herein, a lamellar high-entropy TiVCrMoC3 MXene was synthesized via HF-mediated etching of a TiVCrMoAlC3 MAX precursor and integrated into M...