Xiaoyu Ke

HZO thickness-dependent charge loss mechanisms in HfO2-based MIFIS FeFETs

Hafnium-based ferroelectric field-effect transistors (FeFETs) with metal/gate interlayer/ferroelectric/channel interlayer/silicon (MIFIS) gate stacks are a promising candidate for high-density 3D NAND. However, the severe retention degradation hinders their application, and the d...