Xiaoping Dong

Evolution mechanism of damage locations in drift region of SiC MOSFETs under heavy ion irradiation

This paper investigates the evolution mechanism of severe thermal damage locations in the drift region of the SiC MOSFETs under different applied drain voltages (VDS(irra)) during heavy ion irradiation using 587 MeV 36Kr ions. It is interesting to find from the post-irradiation b...