Xiao Gong

Overcoming the mobility–reliability trade-off in BEOL-compatible In2O3-based FETs through synergistic doping and prolonged annealing

Oxide semiconductors field-effect transistors (OS FETs) capable of simultaneously delivering high mobility and excellent reliability are a key platform for high-performance circuits and memory modules in monolithic three-dimensional integrated circuits (M3D ICs). In this work, we...

Ultraviolet‐Induced Band Engineering in Black Phosphorus/Gallium Nitride Heterojunction Toward High‐Performance Broadband Photodetection

ABSTRACT Broadband photodetectors that combine ultraviolet sensitivity with visible and near‐infrared response are important for multispectral optoelectronic sensing. However, the performance of these photodetectors is often limited by weak interfacial carrier separation and inef...