Xiang Dong

Self‐Powered SWIR Photodetector Based on Se 0.2 Te 0.8 Thin‐Film Heterojunction

ABSTRACT High‐performance short‐wave infrared (SWIR) photodetectors typically rely on single‐crystalline germanium and III–V semiconductors. However, their high material costs and complex fabrication requirements hinder large‐area integration and cost‐effective SWIR technologies....

Broadband Photodetectors and Imaging Arrays Based on PtSe 2 /Si Heterojunctions

ABSTRACT Short‐wave infrared (SWIR) photodetectors are of great importance for applications such as optical communications. However, due to the bandgap limitation of silicon (Si) and the poor compatibility of many SWIR photoactive materials with conventional integrated‐circuit pr...