Xia Guo

Noise reduction in high-density silicon photomultipliers via passive POCl3 doping on trench

Abstract Deep trench isolation (DTI) is indispensable for suppressing crosstalk and enabling high fill factors in dense silicon photomultipliers (SiPMs). However, plasma-induced sidewall defects create interface states that elevate dark count rate (DCR) and afterpulsing (AP) thro...