Vanya Darakchieva

Resolving Lateral Heat Transport in GaN‐on‐SiC HEMT Structures via Transient Thermometry

ABSTRACT Understanding lateral heat transport in GaN high‐electron‐mobility transistors (HEMTs) is essential for the thermal management of high‐power and high‐frequency electronics. Here, lateral thermal transport in GaN HEMTs on 4H‐SiC is investigated using electrical thermometr...

Epitaxial MgSnN 2 on 4H‐SiC (0001): An Earth‐Abundant Nitride for Green Optoelectronics and Photovoltaics

ABSTRACT Group II–IV‐Nitrides has emerged as a novel class of Earth‐abundant semiconductors. Owing to their tunable bandgaps these materials are attractive candidates for replacing expensive Ga‐based alloys in photovoltaics and green‐gap optoelectronics. In this work, epitaxial g...