Trevor R. Smith

Spontaneous Nanopatterning and Strain Relaxation in SiGe Layers Grown by Oxidative Solid‐Phase Epitaxy

ABSTRACT The wafer‐scale monolithic integration of III‐V materials on Si would lead to revolutionary optoelectronic hardware for data, computing, and other applications. However, heteroepitaxy of III‐Vs on Si requires overcoming the large lattice and thermal mismatches between th...