Tobias Fähndrich

Electrostatic control enables robust helical edge-channel transport in III-V quantum spin Hall insulators

Quantum spin Hall transport in InAs/GaInSb-based two-dimensional topological insulators can be limited by parasitic bulk and edge contributions. We demonstrate that these limitations are effectively mitigated through electrostatic control in dual-gated InAs/GaInSb/InAs trilayer q...