Tiwei Chen

Stabilized h-BN release layer on PVD-AlN/sapphire template for high-performance GaN-based flexible weak-light photodetectors

Layered hexagonal boron nitride (h-BN) enables the release and transfer of III-nitride epilayers toward flexible electronics, but its insufficient interfacial adhesion to the substrate would limit its compatibility with conventional fabrication processes. Here, based on a sapphir...