Tian Cui

Heteroepitaxial Growth of Single-Crystal Diamond on Amorphous Carbon under High Pressure and High Temperature

Abstract High-pressure and high-temperature (HPHT) heteroepitaxy enables diamond growth with dislocation densities approaching those of homoepitaxial crystals, yet the role of the amorphous carbon interlayer at the heterointerface remains poorly understood. Here, we investigate t...