Takeshi Kato

Plateau–Rayleigh Instability–Driven Shell-First Growth of (Ge, Si1– x Ge x )–AlN Core–Shell Crystals Exhibiting Telecom E-Band Photoluminescence

Abstract Si and Ge are technologically important semiconductors for electronic, photovoltaic, and optoelectronic applications. Herein, we report mixed-source hydride vapor phase epitaxial growth of (Ge, Si1–xGex)–AlN core–shell crystals on Al-based nanoabsorbers. Nano-CT and micr...