Takahito Nishimura

Ag Precursor-Assisted 350 °C Growth of Cu(In,Ga)Se2 Solar Cells Based on a Three-Stage Process

Abstract Lowering the growth temperature of Cu(In,Ga)Se2 (CIGS) is required for bifacial structures based on CIGS deposition on transparent conductive oxides and for CIGS tandem solar cells, but low-temperature growth generally deteriorates CIGS absorber quality and solar-cell pe...

Direct Sputtering Deposition of a Zn 1− x Ge x O x +1 Buffer Layer With a Controllable Conduction Band for Cd‐Free Cu(In,Ga)S 2 Solar Cells

Cu(In,Ga)S 2 (CIGS) is a promising candidate material for the absorber layer in tandem solar cells, but the unfavorable conduction band offset with the conventional CdS buffer layer means that an alternative n‐type buffer layer material is required. Here, n‐type Zn 1− x Ge x O x...

Controlling Valence Band for Cu2Sn0.38Ge0.62S3 Particles via Li Substitution at Cu Sites

Abstract Cu2(Sn,Ge)S3 (CTGS) is a promising near-infrared-responsive photocathode material whose conduction band minimum can be tuned by varying the Sn/Ge ratio, whereas direct control of the valence band maximum (VBM) remains challenging because of the large Cu 3d contribution t...