Takahiro Goya

Effects of H2 addition on highly selective SiOCN etching using NF3-based plasma

In three-dimensional (3D) stacked logic devices, low dielectric constant (low-k) materials, such as SiOCN, are used as spacer materials and require highly selective isotropic etching. In this study, we investigated the effects of the addition of H2 gas on highly selective SiOCN e...