Tai Li

Cusp-magnetic-field process window optimization for oxygen and vacancy–oxygen defect control in photovoltaic Czochralski silicon growth

High-quality Czochralski silicon (CZ-Si) for photovoltaic applications requires coordinated control of oxygen incorporation, interfacial transport, and vacancy-oxygen defect evolution during crystal growth. In this work, a coupled thermo-flow-oxygen-defect multiphysics model inco...