T. Subhashini

Comparative Performance Analysis of Multi-Barrier GaN HEMTs with β-Ga2O3 Buffer and InGaN Back-Barrier Layers

A TCAD-based comparative study of AlGaN, InAlN, and quaternary InAlGaN barrier GaN HEMTs integrated with an InGaN back-barrier and β-Ga2O3 buffer layer on a SiC substrate is presented. The influence of barrier composition on carrier confinement, electrostatic behavior, and high-f...