Swati Dixit

Interface Trap-Induced Variability and Thermal Reliability in Epitaxial Layer Heterojunction Vertical Tunnel FET

Abstract This study presents an Epitaxial Layer Heterojunction Vertical Tunnel Field Effect Transistor (EL‑HJ-VTFET) employing Mg2Si as the source and a SiGe epitaxial layer to enhance band-to-band tunneling (BTBT) and overall device efficiency. The narrow bandgap of Mg2Si (0.6–0...