Sushanta Bordoloi

AlN Spacer-Induced Improvement in DC, RF, and Breakdown Characteristics of AlN Buffered AlGaN/GaN HEMTs

Abstract This work presents a comprehensive DC and AC performance analysis of AlN buffered AlGaN/GaN HEMTs without (w/o) and with an AlN spacer using TCAD simulations. The incorporation of the AlN spacer substantially enhances the HEMT performance through improved polarization in...