С.И. Петрушенко

Growing Si–Si 1− x Ge x –(Ge 2 ) 1− y (GaAs) y structures in a single technological cycle

Abstract The technology of creating Si–Si 1− x Ge x –(Ge 2 ) 1− y (GaAs) y heterostructures on a single-crystal substrate has been tested. The functional layers are deposited from a limited tin melt solution in a single process cycle, which is optimal from the application’s point...