Shuo Han

Spatial Oxygen-Vacancy Engineering for Enhanced Ferroelectricity in Flexible Hf0.5Zr0.5O2 Devices

HfO2-based ferroelectrics are promising for scalable memories, neuromorphic systems, and flexible electronics, but their performance is governed by oxygen vacancies that affect phase stability, leakage, wake-up behavior, and domain switching. Existing strategies mainly focus on t...