Shuning Yang

HfO2/Y2O3 Bilayer Memristor with Gradual Conductance Modulation for Neuromorphic Computing and Artificial Synapse

Abstract Memristors are promising candidates for neuromorphic computing, but conventional oxide-based memristors suffer abrupt switching and limited synaptic plasticity. This paper reports a W/HfO2/Y2O3/Pt memristor that overcomes limitations through oxygen vacancy gradient and h...