Seongbin Lim

Neutron-Induced Defect-Driven Degradation of Ferroelectric Memory and Neuromorphic Synapses in α-In2Se3 FeS-FETs

Abstract Reliable ferroelectric semiconductor devices are essential for memory and neuromorphic technologies; however, neutron-induced degradation pathways remain unclear. Here, we establish an integrated experimental framework, linking defect characterization with device-level e...

Discovery of Energy‐Localized Trap States via Opto‐Electrical Spectroscopy in UWBG Perovskite La:SrSnO 3 FETs

ABSTRACT Strontium stannate perovskite (SrSnO 3 ) is emerging as a promising material for next‐generation ultra‐wide bandgap (UWBG) semiconductors due to its high electron mobility and optical transparency. However, despite the critical importance of defect analysis to utilize La...