Seokjin Oh

Neutron-Induced Defect-Driven Degradation of Ferroelectric Memory and Neuromorphic Synapses in α-In2Se3 FeS-FETs

Abstract Reliable ferroelectric semiconductor devices are essential for memory and neuromorphic technologies; however, neutron-induced degradation pathways remain unclear. Here, we establish an integrated experimental framework, linking defect characterization with device-level e...