Seohyeon Ju

Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing

ABSTRACT Although indium‐gallium‐zinc oxide (IGZO) has been widely used in thin‐film transistors (TFTs), its application as an active switching medium in resistive random‐access memory (RRAM) has remained relatively less explored, particularly for vertical RRAM (VRRAM) architectu...