Rong Wang

High‐Performance Broadband Infrared Photodetector Based on a VOPc/1T'‐MoTe 2 /Ultra‐Thin SiO 2 /Si Double Heterojunction

ABSTRACT Silicon‐based photodetectors integrated with two‐dimensional (2D) materials are promising for broadband photodetection, yet simultaneously achieving high responsivity, fast response, and broadband near‐infrared (NIR) detection remains challenging. Herein, we demonstrate...

Dislocation StructureTransformation of (111) TwistGrain Boundaries in Silicon

Abstract Grain boundaries (GBs) play a crucial role in determining the performance of nanocrystalline and polycrystalline silicon. In this paper, we investigate the structural transformation of silicon (111) twist GBs through hybrid molecular statics (RBTs method, namely, the rig...