REN Boquan

Annealing-induced interfacial evolution of β-Ga2O3 (001)/4H-SiC heterostructures fabricated by surface-activated bonding

β-Ga 2 O 3 /4H-SiC heterostructures are promising for the heterogeneous integration of ultrawide-bandgap semiconductors, yet the thermal evolution of their bonded interfaces remains insufficiently understood. In this work, β-Ga 2 O 3 (001) and 4H-SiC wafers were directly bonded b...