Ralf Doerner

On-wafer 16-term calibration approach for dual-setup, bias-dependent RF characterization of scaled InP HBTs

Abstract In this article, indium phosphide heterojunction bipolar transistors measured at two different measurement setups are characterized by systematic comparison of the 16-term corrected and conventional 8-term multiline Thru-Reflect-Line (mTRL) corrected scattering parameter...