Rajarshi Chakraborty

Multilevel Resistive Switching and Synaptic Functionality in an Energy Efficient Ferroelectricity Assisted Memristor Guided by Ionic Dielectric Barrier

ABSTRACT A solution‐based method is used to fabricate a multilevel memristive device, in which the ferroelectric polarization of the LiNbO 3 layer is controlled by the ionic‐polarization of the Li 5 AlO 4 barrier layer. The high resistance state (HRS) to low resistance state (LRS...