Pilsang Yun

Passivation-Dependent Device-Level Thermal Robustness of Indium Gallium Oxide Thin-Film Transistors under Dynamic Random-Access Memory Relevant 600 °C Nitrogen Annealing

As conventional silicon-based dynamic random-access memory (DRAM) approaches its physical and electrical scaling limits, oxide semiconductors have emerged as promising channel materials for next-generation memory devices because of their low off-state current and process compatib...