Peng Dong Gao

Weak Superconducting Anisotropy in 4 H b ‐Nb 0.95 Ti 0.05 Se 2 With 1 T /1 H Heterostructure

ABSTRACT Heterostructures of layered transition metal dichalcogenide (TMD) exhibit rich physical properties by the combination of strong electronic correlation effects in 1 T layer and superconductivity in 1 H layer. But the limited number of bulk TMD materials with such heterost...

Composite Crystalline Aluminum Nitride Passivation for Near-Junction Thermal Management in Gallium Nitride High-Electron-Mobility Transistors

In this work, we demonstrate a composite crystalline aluminum nitride (AlN) passivation layer for near-junction thermal management in aluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs). The 120-nm-thick AlN film consists of an ordered...