P. Rajendiran

Investigation of Si1-xGeₓ nanosheet TFET performance and single-event transients through germanium mole fractions

This paper presents a novel vertically stacked SiGe nanosheet Tunnel Field-Effect Transistor (SiGe NS-TFET) structure in which the channel region is engineered with a Si 1-x Geₓ compound material to improve the device electrical performance. The electrical performance of the devi...