Niklas Rorsman

Resolving Lateral Heat Transport in GaN‐on‐SiC HEMT Structures via Transient Thermometry

ABSTRACT Understanding lateral heat transport in GaN high‐electron‐mobility transistors (HEMTs) is essential for the thermal management of high‐power and high‐frequency electronics. Here, lateral thermal transport in GaN HEMTs on 4H‐SiC is investigated using electrical thermometr...