Naoki Okano

Defect-induced recombination analysis in 4H-SiC epitaxial layers based on detailed microwave photoconductive decay curve evaluation

Evaluation of defect-related carrier lifetimes in 4H-SiC epitaxial layers is essential for assessing material quality and device performance. The microwave photoconductive decay (μ-PCD) method is widely used for wafer-level lifetime characterization; however, conventional evaluat...