Norzaini Zainal

Optimization of TMAl preflow for low temperature grown AlN for AlGaN UVC LED heterostructure

High material quality aluminium nitride (AlN) layers are typically achievable at high growth temperatures of above 1200 °C. However, this growth method requires a specialized heater that is not available in most standard reactors. The present study demonstrates that comparable ma...

Research Progress and Challenges of GaN‐Based Micro‐LEDs in Short‐Reach Optical Interconnects

ABSTRACT With the explosive development of the artificial intelligence industry, data centers are facing unprecedented challenges in interconnect bandwidth. Traditional electrical interconnects are gradually approaching their physical limits in terms of bandwidth and power consum...