Minkyu Park

Oxygen Vacancy Engineering for Enhanced Remanent Polarization and Memory Window in a-IGZO/HZO Ferroelectric Field-Effect Transistors

Abstract HfO2-derived ferroelectric field-effect transistors (FeFETs) are promising for nonvolatile memory and logic-in-memory applications owing to CMOS compatibility and low-voltage polarization switching. Amorphous InGaZnO (a-IGZO) is attractive for back-end-of-line compatible...