Maxim G. Kozodaev

Competing hysteresis mechanisms in HZO/MoS2 transistors with a metal–ferroelectric–metal–insulator–semiconductor gate stack

Ferroelectric field-effect transistors based on hafnium oxide offer a versatile platform for advanced memory concepts. Here, we demonstrate a proof-of-concept top-gated Hf0.5Zr0.5O2-based transistor integrating a metal–ferroelectric–metal–insulator–semiconductor (MFMIS) gate stac...