Marcello Giuffrida

The Effect of Passive Substrate Terminations on RON Degradation in GaN Bidirectional Switches

In this paper, four passive terminations are considered for the substrate biasing of Gallium Nitride (GaN) bidirectional high-electron-mobility transistors (HEMTs). These substrate networks are analyzed via switching simulations and by adopting a physical model for the bidirectio...