K. C. Park

A sacrificial HfN interlayer enables oxygen-buffered Mo electrodes for sub‑0.4nm equivalent oxide thickness of HfO2/ZrO2 nanolaminates for DRAM capacitors

Continued scaling of dynamic random-access memory (DRAM) capacitors demands simultaneous achievement of high capacitance density and extremely low leakage current at ever-decreasing physical thickness, making interfacial chemistry and defect control as critical as the choice of h...