Justin Hutcheson

III-Nitride Nanowire-Based Gas Sensors: From Material Design to Low-Temperature Sensing Performance

III-nitride nanowires (NWs), including gallium nitride (GaN) and its alloys, possess tunable direct band gaps, high electron mobility, and large breakdown voltages, making them highly promising for electronic and optoelectronic applications. In addition, their wide bandgap, effic...