Junshuai Chai

HZO thickness-dependent charge loss mechanisms in HfO2-based MIFIS FeFETs

Hafnium-based ferroelectric field-effect transistors (FeFETs) with metal/gate interlayer/ferroelectric/channel interlayer/silicon (MIFIS) gate stacks are a promising candidate for high-density 3D NAND. However, the severe retention degradation hinders their application, and the d...

Polarity Reversal of Dipole at the SiO2/HZO Interface in Ferroelectric Field-Effect Transistors by Oxygen Scavenging of TiN

Abstract Doped HfO2-based ferroelectric field-effect transistors (FeFETs) have attracted considerable attention for their potential in nonvolatile memory applications. Research on the dipole at the SiO2/HfO2-based ferroelectric interface is scarce. This study finds that the polar...