Julien Fagot

Over 400 V Field‐Plate Enhanced Vertical Diamond Schottky Diodes With Near‐Ideal Behavior and Over 2700 A/cm 2 Current Density

Vertical diamond Schottky barrier diodes with field‐plate edge termination were fabricated on 1.5 μm low‐doped () epilayers grown on heavily boron‐doped substrates. Devices with Schottky radii of 25–350 μm and FP lengths of 0–20 μm were systematically characterized. Temperature‐d...