Jong Hoon Shin

Fast Electronic Memristors with Improved Retention and Synaptic Functionality Enabled by Tri-TaOx Engineering

Artificial synaptic memristors require fast switching, stable retention, low variability, and linear conductance modulation, but achieving these properties simultaneously is difficult in electronic bipolar resistive switching (e-BRS) devices. In this study, a tri-TaOx memristor i...