Joan M. Redwing

1T‐to‐2H Phase Evolution During Epitaxial Growth of Transition Metal Dichalcogenides

ABSTRACT Polymorphism in transition‐metal dichalcogenides is typically defined based on the post‐growth phase (1T or 2H) or stabilized heterophase structures. Transient 1T‐to‐2H phase evolution is demonstrated during epitaxial growth of MoS 2 and WSe 2 on sapphire by metalorganic...

Effect of Substrate Miscut on the Epitaxial Growth of MoS2 on Sapphire

Abstract The combined effects of substrate miscut angle and growth temperature on the epitaxial growth and properties of MoS2 monolayers synthesized by metalorganic chemical vapor deposition (MOCVD) on c-plane sapphire substrates were investigated. Increasing the miscut angle tow...