Jinwoo Jo

All-InGaN/GaN red light-emitting diodes with low-temperature-grown GaN capping layer

Abstract The growth of indium-rich InGaN red light-emitting diodes (LEDs) is essential for realizing all-nitride full-color micro-LED displays. This study presents a strategy for fabricating red LEDs with InGaN/GaN multiple quantum wells (MQWs) by introducing a low-temperature-gr...