Jiawei Shao

Tertiary Amine Pendants‐Mediated Charge Regulation for Tunable Resistive Switching in Fully Printed NDI ‐ MXene Memristors

ABSTRACT Flexible in‐memory computing devices and neuromorphic computing systems urgently demand resistive random‐access memory devices that are compatible with large‐area, low‐cost printing technologies and feature tunable resistive switching behavior. Herein, an n‐type conjugat...