Jiankai Sun

Influence of Mg concentration in the AlGaN electron blocking layer on the temperature response of GaN-based near-UV laser diodes

Temperature responses of the output characteristics of GaN-based near-UV laser diodes (LDs) with different Mg concentrations in the AlGaN electron blocking layer (EBL) were numerically investigated over the temperature range of 300–360 K under an ideal-interface assumption. The r...