Jan Schmidt

Drastic Improvement in Carrier Lifetime (>50 ms) and Stability of Poly‐Si‐Passivated n‐Type Cz‐Si Wafers by a Simple Belt‐Line Furnace Annealing Step

We examine the stability of the carrier lifetime of n‐type Cz‐Si wafers with symmetrical n + ‐poly‐Si layers on silicon oxide passivation. Such layers are used in today’s standard industrial TOPCon solar cells and probably in next‐generation IBC cells. Firing in an industrial bel...